Physical modeling of Fermi-level effects for decanano device process simulations
نویسندگان
چکیده
منابع مشابه
Physical modeling of Fermi-level effects for decanano device process simulations
We report on a physically-based Fermi-level modeling approach designed to be accurate and yet amenable to be implemented in a device-size process simulator. We use an atomistic kinetic Monte Carlo method in conjunction with a continuum treatment for carrier densities. The model includes (i) charge reactions and electric bias according to the local Fermi-level, (ii) pairing and break-up reaction...
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ژورنال
عنوان ژورنال: Materials Science and Engineering: B
سال: 2004
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2004.07.042